28 lines
1.2 KiB
TeX
28 lines
1.2 KiB
TeX
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\section{Discussion \& Conclusion}
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\begin{frame}
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\frametitle{Discussion \& Conclusion}
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\begin{itemize}
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\item Own simulations
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\begin{itemize}
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\item Better results to be expected (technology with higher $f_\text{t}$, $f_\text{max}$, stability not considered)
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\item Maybe better results by using current mirrors to set operating points of buffer instead of resistors
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\end{itemize}
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\bigskip
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\item General structure
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\begin{itemize}
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\item Removal of $g_\text{m}$ stage of Gilbert cell $\rightarrow$ more voltage headroom
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\item High bandwidth TIA and inductive peaking $\rightarrow$ high bandwidth
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\item Differential to single-ended conversion $\rightarrow$ dense chip-to-package transition
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\end{itemize}
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\bigskip
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\item Applications of this design
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\begin{itemize}
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\item SiGe HBT technology integrable with CMOS $\rightarrow$ scalable, suitable for mixed-signal ICs
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\item Ideal for electronic beam stearing in mm-Wave applications (because of small size, moderate noise figure)
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\end{itemize}
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\end{itemize}
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\end{frame}
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