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\section{Discussion \& Conclusion}

\begin{frame}
	\frametitle{Discussion \& Conclusion}

	\begin{itemize}
		\item General structure
		      \begin{itemize}
			      \item Removal of $g_\text{m}$ stage of Gilbert cell $\rightarrow$ more voltage headroom
			      \item High bandwidth TIA and inductive peaking $\rightarrow$ high bandwidth
			      \item Differential to single-ended conversion $\rightarrow$ dense chip-to-package transition
		      \end{itemize}
		      \bigskip
		\item Own simulations
		      \begin{itemize}
			      \item Better results to be expected (technology with higher $f_\text{t}$, $f_\text{max}$, stability not considered)
			      \item Further investigation needed to determine whether unusual LO power behavior is problematic
			      \item Maybe better results by using current mirrors to set operating points of buffer instead of resistors
			      \item Maybe better results by replacement of discrete component matching networks by transmission line based ones
		      \end{itemize}
		      \bigskip
		\item Applications of this design
		      \begin{itemize}
			      \item SiGe HBT technology integrable with CMOS $\rightarrow$ scalable, suitable for mixed-signal ICs
			      \item Ideal for electronic beam stearing in mm-Wave applications (because of small size, moderate noise figure)
		      \end{itemize}
	\end{itemize}
\end{frame}
