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\section{Discussion \& Conclusion}

\begin{frame}
	\frametitle{Discussion \& Conclusion}

	\begin{itemize}
		\item General structure
		      \begin{itemize}
			      \item Removal of $g_\text{m}$ stage of Gilbert cell $\rightarrow$ more voltage headroom
			      \item High bandwidth TIA and inductive peaking $\rightarrow$ high bandwidth
			      \item Differential to single-ended conversion $\rightarrow$ dense chip-to-package transition
		      \end{itemize}
		      \bigskip
%		\item Own simulations
%		      \begin{itemize}
%			      \item Much higher conversion gain $\leftarrow$ technology with higher $f_\text{t}$ and $f_\text{max}$, no stability considerations
%		      \end{itemize}
%		      \bigskip
		\item Applications of this design
		      \begin{itemize}
                  \item SiGe HBT technology integrable with CMOS $\rightarrow$ scalable, suitable for mixed-signal ICs
                  \item Ideal for electronic beam stearing in mm-Wave applications
		      \end{itemize}
	\end{itemize}
\end{frame}